Publications

  1. E. Palmese, M. R. Peart, D. Borovac, R. Song, N. Tansu, and J. J. Wierer, Jr., “Thermal Oxidation Rates and Resulting Optical Constants of Al0.83In0.17N Films Grown on GaN”, Journal of Applied Physics, 129, 125105 (2021). DOI: 10.1063/5.0035711
  2. M. R. Peart, X. Wei, D. Borovac, W. Sun, R. Song, N. Tansu, and J. J. Wierer, Jr., “AlInN/GaN diodes for power electronic devices”, Applied Physics Express, 13, 091006 (2020). DOI: 10.35848/1882-0786/abb180
  3. ​D. Borovac, W. Sun, M. R. Peart, R. Song, J. J. Wierer, Jr., and N. Tansu, “Low Background Doping in AlInN Grown on GaN via Metalorganic Vapor Phase Epitaxy” Journal of Crystal Growth 548, 125837 (2020). DOI: 10.1016/j.jcrysgro.2020.125847
  4. O. O. Ekoko 1, J. C. Goodrich, A. J. Howzen, N. C. Strandwitz, J. J. Wierer, Jr. 1, and N. Tansu “Electrical Properties of MgO/GaN Metal-Oxide-Semiconductor Structures” Solid State Elec. (2020). DOI: 10.1016/j.sse.2020.107881
  5. S. A. A. Muyeed, X. Wei, D. Borovac, R. Song, N. Tansu, and J. J. Wierer, Jr., “Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dots templates”, Journal of Crystal Growth, 540, 125652 (2020). DOI: 10.1016/j.jcrysgro.2020.125652
  6. J. C Goodrich, T. G. Farinha, L. Ju, A. J. Howzen, A. Kundu, O. N. Ogidi-Ekoko, J. J. Wierer, Jr., N. Tansu, N. C. Strandwitz, “Surface Pretreatment and Deposition Temperature Dependence of MgO Epitaxy on GaN by Thermal Atomic Layer Deposition”, Journal of Crystal Growth (2020).  DOI: 10.1016/j.jcrysgro.2020.125568
  7. M. R. Peart, and J. J. Wierer, Jr., "Edge Termination for III-Nitride Power Devices using Polarization Engineering", IEEE Transactions on Electron Device, 67, 571 (2020). DOI: 10.1109/TED.2019.2958485
  8. D. Borovac, W. Sun, R. Song, J. J. Wierer Jr., and N. Tansu, “On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE”,  Journal of Crystal Growth, 533, 125469 (2020). DOI: /10.1016/j.jcrysgro.2019.125469
  9. S. A. A. Muyeed, W. Sun, M. R. Peart, R. M. Lentz, X. Wei, D. Borovac, R. Song, N. Tansu, and J. J. Wierer, Jr., “Recombination rates in green-yellow InGaN-based multiple quantum wells”, J. Appl. Phys,. 126, 213106 (2019). DOI: 10.1063/1.5126965
  10. J. J. Wierer, Jr. and N. Tansu, "III-nitride micro-LEDs for efficient emissive displays", Laser and Photonics Review, 13, 1900141 (2019). DOI: 10.1002/lpor.201900141
  11. M. R. Peart, X. Wei, D. Borovac, W. Sun, N. Tansu, and J. J. Wierer, Jr.,“Thermal Oxidation of AlInN for III-nitride Electronic and Optoelectronic Devices”, ACS Applied Electronic Materials, 1, 1367-1371 (2019). DOI: 10.1021/acsaelm.9b00266
  12. X. Wei, S. A. A. Muyeed, M. Peart, W. Sun, N. Tansu, and J. J. Wierer, Jr., “Room Temperature Luminescence of InGaN Quantum Dots Formed by Quantum-Sized-Controlled Photoelectrochemical Etching”, Appl. Phys. Lett., 113, 121106 (2018). DOI: 10.1063/1.5046857
  13. M. R. Peart, N. Tansu, and J. J. Wierer, Jr.,"AlInN for Vertical Power Electronic Devices", IEEE Trans. Elec. Devices, 65 (2018). DOI: 10.1109/TED.2018.2866980
  14. W. Sun, S. A. S. Muyeed, R. Song, J. J. Wierer, Jr., and N. Tansu "Integrating AlInN Interlayers into InGaN/GaN Multiple Quantum Wells for Enhanced Green Emission", Appl. Phys. Lett. 112, 201106 (2018). DOI: 10.1063/1.5028257
  15. W. Sun, C.-K. Tan, J. J. Wierer, Jr., and N. Tansu “Ultra-Broadband Optical Gain in III-Nitride Digital Alloys”, Scientific Reports, 8, 3109 (2018). DOI: 10.1038/s41598-018-21434-6
  16. S. A. A. Muyeed, W. Sun, X. Wei, R. Song, D. D. Koleske, N. Tansu, and J. J. Wierer, Jr., “Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers”, AIP Advances, 7, 105312 (2017). DOI: 10.1063/1.5000519
  17. J. J. Wierer, Jr., J. R. Dickerson, A. A. Allerman, A. M. Armstrong, M. H. Crawford, and R. J. Kaplar, “Simulations of junction termination extensions in vertical GaN power diodes”, IEEE Trans. Elec. Devices (2017). DOI: 10.1109/TED.2017.2684093
  18. C.-K. Tan, W. Sun, J. J. Wierer, Jr., and N. Tansu, “Effect of Interface Roughness on Auger Recombination in Semiconductor Quantum Wells”, AIP Advances, 7, 035212 (2017). DOI: 10.1063/1.4978777
  19. A. A. Allerman, A. M. Armstrong, A. J. Fischer, J. R. Dickerson, M. H. Crawford, M. P. King, M. W. Moseley, J. J. Wierer, Jr., and R. J. Kaplar, “Al0.3Ga0.7N PN diode with breakdown voltage greater than 1600 V”, 6, Electronics Letters (2016). DOI: 10.1049/el.2016.1280
  20. J. J. Wierer, Jr., N. Tansu, A. J. Fischer, and J. Y. Tsao, “III-nitride quantum dots for ultra-efficient solid-state lighting”, Laser and Photonics Reviews, (2016). DOI: 10.1002/lpor.201500332
  21. A. M. Armstrong, A. A. Allerman, A. J. Fischer, M. P. King, M. S. van Heukelom, M. W. Moseley , R. J. Kaplar, J. J. Wierer, M. H. Crawford, and J. R. Dickerson, “High voltage and high current density vertical GaN power diodes”, Electronics Letters, 52,1170 (2016). DOI: 10.1049/el.2016.1156
  22. J. R. Dickerson, A. A. Allerman, B. N. Bryant, A. J. Fischer, Michael P. King, M. W. Moseley,A. M. Armstrong, R. J. Kaplar, I. C. Kizilyalli, O. Aktas, and J. J. Wierer, Jr., “Vertical GaN Power Diodes With a Bilayer Edge Termination”, IEEE Trans. Elec. Devices, 63, 419 (2016). DOI:10.1109/TED.2015.2502186
  23. M. P. King, A. M. Armstrong, J. R. Dickerson, G. Vizkelethy, R. M. Fleming, J. Campbell, W. R. Kizilyalli, D. P. Bour, O. Atkas, D. Disney, J. J. Wierer, Jr., A. A. Allerman, M. W. Moseley, F. Leonard, A. A. Talin, and R. J. Kaplar “Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes”, IEEE Trans on Nuclear Science, 62, 2912 (2015). DOI: 10.1109/TNS.2015.2480071
  24. J. J. Wierer, Jr., A. A. Allerman, E. J. Skogen, A. Tauke-Pedretti, G. A. Vawter, and I. Montano, “Selective layer disordering in intersubband Al0.028Ga0.972N/AlN superlattices with silicon nitride capping layer” Applied Physics Express, 8, 061004 (2015). DOI:10.7567/APEX.8.061004
  25. A. M. Armstrong, M Moseley, A. A. Allerman, M. H. Crawford, and J. J. Wierer Jr., “Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N” J. Appl. Phys. 117, 185704 (2015). DOI:10.1063/1.4920926
  26. A. M. Armstrong, B. N. Bryant, M. H. Crawford, D. D. Koleske, S. R. Lee, and J. J. Wierer Jr., “Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers” J. Appl. Phys. 117, 134501 (2015). DOI:10.1063/1.4916727
  27. M. W. Moseley, A. A. Allerman, M. H. Crawford, J. J. Wierer Jr., M. L. Smith and A. A. Armstrong, “Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes” J. Appl. Phys. 117, 095301 (2015). DOI: 10.1063/1.4908543
  28. M. Moseley, A. Allerman, M. Crawford, J. J. Wierer Jr., M. Smith, and L Biedermann, “Defect-Enabled Electrical Current Leakage in Ultraviolet Light-Emitting Diodes,” physica status solidi (a), 212 (4), 723-726 (2015). DOI:10.1002/pssa.201570422
  29. D. D. Koleske, A. J. Fischer, B. N. Bryant, P. G. Kotula, and J. J. Wierer, Jr., “On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590nm with AlGaN interlayers” J. Crystal Growth, 415, 57, (2015). DOI:10.1016/j.jcrysgro.2014.12.034
  30. J. J. Wierer, Jr. and J. Y. Tsao, “Advantages of laser diodes in solid-state lighting” physica status solidi (a), 5, 980 (2015). DOI:10.1002/pssa.201431700
  31. J. J. Wierer, Jr., A. A. Allerman , E. J. Skogen , A. Tauke-Pedretti , C. Alford , G. A. Vawter , and I. Montaño, “Layer disordering and doping compensation of an intersubband AlGaN/AlN superlattice by silicon implantation”, Appl. Phys. Lett., 105, 131107 (2014). DOI:10.1063/1.4896783
  32. J. J. Wierer, Jr., I. Montano, M. Mosely, and A. A. Allerman, “Influence of optical polarization on the improvement of light extraction efficiency with reflective scattering structures in ultra-violet light-emitting diodes,” Appl. Phys. Lett. 105, 061106 (2014). DOI:10.1063/1.4892974
  33. M. Moseley, A. Allerman, M. Crawford, J. J. Wierer Jr., M. Smith, and L Biedermann, “Defect-Enabled Electrical Current Leakage in Ultraviolet Light-Emitting Diodes,” physica status solidi (a), 116 (5), 053104 (2014). DPI: 10.1002/pssa.201400182
  34. J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Fischer, D. D. Koleske, G. Subramania, G. T. Wang, J. J. Wierer, and B. Karlicek, “Toward Smart and Ultra-Efficient Solid-State Lighting”, Adv. Opt. Mat., 2, 803 (2014). DOI: 10.1002/adom.201400131
  35. J. J. Wierer, Jr., I. Montano, M. H. Crawford, and A. A. Allerman, “Effect of thickness and carrier density on the optical polarization of Al0.44Ga0.56N/Al0.55Ga0.45N quantum well layers,” J. Appl. Phys. 115, 174501 (2014). DOI:10.1063/1.4874739
  36. A. Benz, S. Campione, M. W. Moseley, J. J. Wierer, Jr., A. A. Allerman, J. R. Wendt, I. Brener, “Optical strong coupling between near-infrared metamaterials and intersubband transitions in III-nitride heterostructures,” ACS Photonics, 1, 906, (2014). DOI:10.1021/ph500192v
  37. M E. Coltrin, A. M. Armstrong, I. Brener, W. W. Chow, M. H. Crawford, A. J. Fischer, D. F. Kelley, D. D. Koleske, Q. Li, L. J. Lauhon, J. E. Martin, M. Nyman, E. F. Schubert, L. E. Shea-Rohwer, G. Subramania, J. Y. Tsao, G. T. Wang, J. J. Wierer, Jr., and J. B. Wright, “The Energy Frontier Research Center for Solid-State Lighting Science: Exploring New Materials Architectures and Light Emission Phenomena”, J. Phys. Chem. C, 118, 13330 (2014). DOI:10.1021/jp501136j
  38. D. D. Koleske, J. J. Wierer, Jr., A. J. Fischer, and S. R. Lee, “Controlling indium incorporation in InGaN barriers with dilute hydrogen flows”, J. Crystal Growth, 390, 38 (2014). DOI:10.1016/j.jcrysgro.2013.12.037
  39. G. T. Wang, Q. Li, J. J. Wierer, D. D. Koleske, and J. J. Figiel, “Top–down fabrication and characterization of axial and radial III-nitride nanowire LEDs”, physica status solidi (a), 211, 748 (2014). DOI:10.1002/pssa.201300491
  40. J. J. Wierer, Jr., D. S. Sizov, J. Y. Tsao, “The potential of III-nitride laser diodes for solid-state lighting”, physica status solidi (c), 11, 674 (2014). DOI: 10.1002/pssc.201300422
  41. J. J. Wierer, Jr., D. S. Sizov, and J. Y. Tsao, “Comparison between Blue Laser and Light-Emitting Diodes for Future Solid-State Lighting”, Lasers and Photonics Reviews, 7 963 (2013). DOI:10.1002/lpor.201300048 Altmetric
  42. J. R. Riley, S. Padalkar, Q. Li, P. Lu, J. J. Wierer, Jr., D. D. Koleske, G. T. Wang, and L. J. Lauhon, “Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN Core-Shell Nanowire Array Light Emitting Diode”, Nano Letters, 13 4317 (2013). DOI:10.1021/nl4021045
  43. S. Howell, S. Padalkar, K. Yoon, Q. Li, J. J. Wierer, Jr., D. D. Koleske, G. Wang, and Lincoln J. Lauhon, “Spatial Mapping of Efficiency of GaN/InGaN Nanowire Array Solar Cells using Scanning Photocurrent Microscopy”, Nano Letters 13, 5123, (2013). DOI:10.1021/nl402331u
  44. S. R. Lee, D. D. Koleske, M. H. Crawford, and J. J. Wierer, Jr., “Effect of interface grading and lateral thickness variations on x-ray diffraction by InGaN-GaN multiple quantum wells” J. Crystal Growth, 355, 63 (2012). DOI:10.1016/j.jcrysgro.2012.06.048
  45. T. Kim, Y. H. Jung, J. Song, D. Kim, Y. Li, H.-S. Kim, I.-S. Song, J. J. Wierer, H. A. Pao, Y. Huang and J. A. Rogers, “Light-Emitting Diodes: High-Efficiency, Microscale GaN Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates” Small, 8, 1643 (2012). DOI:10.1002/smll.201200382
  46. J. J. Wierer, Jr., Q. Li, D. D. Koleske, S. R. Lee, and G. T. Wang, “III-nitride core-shell nanowire arrayed solar cells”, Nanotechnology, 23 194007 (2012). DOI:10.1088/0957-4484/23/19/194007
  47. J. J. Wierer, Jr., D. D. Koleske, and S. R. Lee, “Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells” Appl. Phys. Lett., 100, 111119 (2012). DOI:10.1063/1.3695170
  48. A. Neumann, J. J. Wierer, Jr., W. Davis, Y. Ohno, S. R. J. Brueck, and J. Y. Tsao, “Four-color laser white illuminant demonstrating high color rendering quality”, Optics Express, 19, A982 (2011). DOI:10.1364/OE.19.00A982
  49. J. J. Wierer, Jr., A. A. Allerman, and Q. Li, “Silicon impurity-induced layer disordering of AlGaN/AlN superlattices”, Appl. Phys. Lett., 97, 051907 (2010). DOI: 10.1063/1.3478002
  50. J. J. Wierer, Jr., A. J. Fischer, and D. D. Koleske, “The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devices,” Appl. Phys. Lett. 96, 051107 (2010). DOI:10.1063/1.3301262
  51. J. J. Wierer, Jr., A. David, M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nature Photonics, 3,1 (2009). DOI:10.1038/nphoton.2009.21
  52. N. F. Gardner, J. C. Kim, J. J. Wierer, M. R. Krames, and Y-C. Shen “Polarization Anisotropy in the Electroluminescence of m-plane InGaN Light-Emitting Diodes,” Appl. Phys. Lett. 86, 111101 (2005). DOI:10.1063/1.1875765
  53. J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, M. M. Sigalas, “InGaN/GaN Quantum-Well Heterostructure Light-Emitting Diodes Employing Photonic Crystal Structures,” Appl. Phys. Lett. 84, pp. 3885 (2004). DOI:10.1063/1.1738934
  54. Y-C. Shen, J. J. Wierer, M. R. Krames, M. J. Ludowise, M. S. Misra, F. Ahmed, A. Y. Kim, G. O. Mueller, J. C. Bhat, S. A. Stockman, P. S. Martin, “Optical cavity effects in InGaN/GaN Quantum-Well-Heterostructure Flip-Chip Light-Emitting Diodes,” Appl. Phys. Lett. 82, pp. 2221 (2003). DOI:10.1063/1.1566098
  55. F. M. Stranka, J. Bhat, D. Collins, L. Cook, M. G. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, J. J. Wierer, “High Power LEDs – Technology Status and Market Applications”, phys. Stat. Sol. (a), Volume 194, Issue 2, (2002). DOI:10.1002/1521-396X(200212)194:2<380::AID-PSSA380>3.0.CO;2-N
  56. M. R. Krames, J. Bhat, D. Collins, N. F. Gardner, W. Götz, C. H. Lowery, M. Ludowise, P. S. Martin, G. Mueller, R. Mueller-Mach, S. Rudaz, D.A . Steigerwald, S. A. Stockman, and J. J. Wierer, “High Power III-Nitride Emitters for Solid State Lighting,” phys. stat. sol. (a), Volume 192, Issue 2, (2002). DOI:10.1002/1521-396X(200208)192:2<237::AID-PSSA237>3.0.CO;2-I
  57. A. Y. Kim, W Götz, DA Steigerwald, J. J. Wierer, N. F. Gardner, J. Sun, S. A. Stockman, P. S. Martin, M. R. Krames, R. S. Kern, F. M. Steranka. “Performance of High-Power AlInGaN Light Emitting Diodes,” phys. Stat. Sol. (a), 188, 15 (2001). DOI: 10.1002/1521-396X(200111)188:1<15::AID-PSSA15>3.0.CO;2-5
  58. J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, G. Christenson, Y.-C. Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Götz, N. F. Gardner, R. S. Kern, S. A. Stockman “High-Power AlGaInN Flip-Chip Light-Emitting Diodes,” Appl. Phys. Lett. 78, pp. 3379 (2001). DOI: 10.1063/1.1374499
  59. J. J. Wierer, “Tunnel Contact Junction AlGaAs-GaAs-InGaAs Quantum Well Heterostructure Lasers and Light Emitters with Native-Oxide Defined Lateral Currents,” PhD Thesis, University of Illinois, May 1999. URI: http://hdl.handle.net/2142/81288
  60. J. J. Wierer, D. A. Kellogg, and N. Holonyak, Jr., “Tunnel Contact Junction Native-Oxide Aperture Vertical-Cavity Surface-Emitting Lasers and Resonant-Cavity Light-Emitting Diodes,” Appl. Phys. Lett. 74, 926 (1999). DOI:10.1063/1.123452
  61. P. W. Evans, J. J. Wierer, and N. Holonyak, Jr., “AlxGa1-xAs Native-Oxide-Based Distributed Bragg Reflectors for Vertical-Cavity Surface-Emitting Lasers,” J. Appl. Phys. 84, 5436 (1999). DOI:10.1063/1.368857
  62. J. J. Wierer, P. W. Evans, N. Holonyak, Jr., and D. A. Kellogg, “Vertical Cavity Surface Emitting Lasers Utilizing Native Oxide Mirrors and Buried Contact Junctions,” Appl. Phys. Lett. 72, 2743 (1998). DOI:10.1063/1.121445
  63. J. J. Wierer, P. W. Evans, and N. Holonyak, Jr., “Transition from Edge to Vertical Cavity Operation of Tunnel Contact AlGaAs-GaAs-InGaAs Quantum Well Heterostructure Lasers,” Appl. Phys. Lett. 27, 797 (1998). DOI:10.1063/1.120869
  64. J. J. Wierer, P. W. Evans, N. Holonyak, Jr., and D. A. Kellogg, “Lateral Electron Current Operation of Vertical-Cavity Surface-Emitting Lasers with Buried Tunnel Contact Hole Sources,” Appl. Phys. Lett. 71, 3468-3470 (1997). DOI:10.1063/1.120400
  65. J. J. Wierer, P. W. Evans, and N. Holonyak, Jr., “Buried Tunnel Contact Junction AlGaAs-GaAs-InGaAs Quantum Well Heterostructure Lasers with Oxide-Defined Lateral Currents,” Appl. Phys. Lett. 71, 2286-2288 (1997). DOI: 10.1063/1.120071
  66. P. W. Evans, J. J. Wierer, and N. Holonyak, Jr., “Photopumped Laser Operation of an Oxide Post GaAs-AlAs Superlattice Photonic Lattice,” Appl. Phys. Lett. 70, 1119-1120 (1997). DOI:10.1063/1.118480
  67. J. J. Wierer, S. A. Maranowski, N. Holonyak, Jr., P. W. Evans, and E. I. Chen, “Double Injection and Negative Resistance in Stripe Geometry Oxide Aperture AlyGa1-yAs-GaAs-InxGa1-xAs Quantum Well Heterostructure Laser Diodes,” Appl. Phys. Lett. 69, 2882-2884 (1996). DOI:10.1063/1.117350
  68. J. J. Wierer, “Current Overview of the Far IR p-Ge Laser”, Masters Thesis, University of Illinois, May 1995.
  69. P. D. Coleman and J. J. Wierer, “Establishment of a Dynamic Model for the p-Ge Far IR Laser,” International Journal of Infrared and Millimeter Waves 16, 3 (1995). DOI:10.1007/BF02085845

Conference Presentations

  1. J. J. Wierer, Jr., S. A. A. Muyeed, H. Xue, X. Wei, R. Song, and N. Tansu “Efficient III-nitride LEDs for displays”, 21st International Meeting on Information Display - IMID, (August 2021) Virtual (invited).
  2. J. J. Wierer, Jr, X. Wei, S. A. A. Muyeed, R. Song, and N. Tansu “Size-controlled self-assembled InGaN quantum dots”, SPIE Photonics West 2021, (February 2021) San Francisco, CA. (invited).
  3. X. Wei, S. A. A. Muyeed, M. Peart, N. Tansu, and J. J. Wierer, Jr., “Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dots templates”, 62th Electronic Materials Conference (July 2020), Virtual.
  4. E. Palmese, M. R. Peart, S. A. A. Muyeed, X. Wei, R. Song, N. Tansu, and J. J. Wierer, Jr. “AlInN-GaN Based Power Electronic Devices Utilizing AlInO as a Gate Insulator”, 62th Electronic Materials Conference (July 2020), Virtual.
  5. J. C Goodrich, T. G. Farinha, L. Ju, A. J. Howzen, A. Kundu, O. N. Ogidi-Ekoko, J. J. Wierer, Jr., N. Tansu, N. C. Strandwitz, “Structural and electrical properties of MgO on GaN by thermal atomic layer deposition” SPIE Photonics West 2020, Oxide-based Materials and Devices XI, (February 2020) San Francisco, CA.
  6. S. A. A. Muyeed, X. Wei, D. Borovac, R. Song, N. Tansu, and J. J. Wierer, Jr., " Controlled growth of self-assembled InGaN quantum dots using templates of quantum-size-controlled photo-electrochemical etched quantum dots", Dept of Energy Solid State Lighting Workshop (January 2019) San Diego, CA. 
  7. M. R. Peart and J. J. Wierer, Jr.,” Polarization Edge Termination for GaN Vertical Power Devices”, 13thInternational Conference on Nitride Semiconductors (July 2019), Bellevue, WA. (poster)
  8. R. M. Lentz, M. R. Peart, and J. J. Wierer, Jr., “GaN/AlInO Waveguide for Visible Light Communications”,13thInternational Conference on Nitride Semiconductors (July 2019), Bellevue, WA. (poster)
  9. X. Wei, S. A. A. Muyeed, M. Peart, N. Tansu, and J. J. Wierer, Jr., “Room Temperature Luminescence of Passivated InGaN Quantum Dots Formed by Quantum-Sized-Controlled Photoelectrochemical Etching”, 13thInternational Conference on Nitride Semiconductors (July 2019), Bellevue, WA. (poster)
  10. M. R. Peart, X. Wei, D. Borovac, W. Sun, N. Tansu, and J. J. Wierer, Jr.,” Wet Thermal Oxidation of AlInN”, 13thInternational Conference on Nitride Semiconductors (July 2019), Bellevue, WA. (poster)
  11. M. R. Peart, D. Borovac, W. Sun, N. Tansu, and J. J. Wierer, Jr.,” AlInN Power Diodes”, 13thInternational Conference on Nitride Semiconductors (July 2019), Bellevue, WA.
  12. X. Wei, S. A. A. Muyeed, M. Peart, N. Tansu, and J. J. Wierer, Jr., “Room Temperature Luminescence of Passivated InGaN Quantum Dots Formed by Quantum-Sized-Controlled Photoelectrochemical Etching”, 61thElectronic Materials Conference (June 2019), Ann Arbor, MI.
  13. M. Peart and J. J. Wierer, Jr.,” Polarization Edge Termination for GaN Vertical Power Devices”, 61thElectronic Materials Conference (June 2019), Ann Arbor, MI.
  14. M. R. Peart, D. Borovac, W. Sun, N. Tansu, and J. J. Wierer, Jr.,” AlInN for Vertical Power Electronic Devices”, 61th Electronic Materials Conference (June 2019), Ann Arbor, MI.
  15. M. R. Peart, X. Wei, D. Borovac, W. Sun, N. Tansu, and J. J. Wierer, Jr.,” Wet Thermal Oxidation of AlInN”, 61th Electronic Materials Conference (June 2019), Ann Arbor, MI.
  16. S. A. A. Muyeed, W. Sun, X. Wei, R. B. Song, N. Tansu, and J. J. Wierer, Jr., "Improvement in the radiative efficiency of InGaN-based multiple quantum wells using AlGaN interlayers", SPIE Photonics West (February 2019) San Francisco, CA.
  17. I. E. Fragkos, W. Sun, D. Borovac, R. B. Song, J. J. Wierer, and N. Tansu, “Delta-InN/AlGaN Interlayer Integrated in InGaN Active Region for Long Wavelength Emission”, SPIE Photonics West 2019, Gallium Nitride Materials and Devices XIV, (February 2019) San Francisco, CA.
  18. J. J. Wierer, Jr., “Green and red InGaN emitters for monolithic white light and displays”, EERE Solid-State Lighting Conference (January 2019) Dallas, TX. (invited panel).
  19. M. Peart, N. Tansu, and J. J. Wierer, Jr., “AlInN for Vertical Power Electronic Devices”, International Workshop on Nitride Semiconductors 2018 (November 2108) Kanazawa, Japan.
  20. I. E. Fragkos, D. Borovac, W. Sun, R. Song, J. J. Wierer, Jr, and N. Tansu, “Experimental Studies of Delta-InN Incorporation in InGaN Quantum Well for Long Wavelength Emission”, IEEE Photonics Conference (October 2018) Reston, VA.
  21. X. Wei, S. A. A. Muyeed, M. Peart, N. Tansu, and J. J. Wierer, Jr., “Controlled Synthesis of InGaN Quantum Dots for Efficient Light Emitters”, IEEE Photonics Conference 2018, (October 2018) Reston, VA, 
  22. S. A. A. Muyeed, W. Sun, X. Wei, R. B. Song, D. Koleske, N. Tansu, and J. J. Wierer, Jr., “Improvement in the radiative efficiency of InGaN-based multiple quantum wells using AlGaN interlayers”, IEEE Photonics Conference 2018, (October 2018) Reston, VA.
  23. M. Peart, N. Tansu, and J. J. Wierer, Jr., “AlInN for Vertical Power Electronic Devices”, Les Eastman Conference 2018 (Aug 2108), Columbus, OH.
  24. R. Lentz, M. Peart, S. A. A. Muyeed, and J. J. Wierer, Jr. “Differential Carrier Lifetime Measurements of InGaN Light-Emitting Diodes”, David and Lorraine Freed Undergraduate Research Symposium, Lehigh University (April 2018) Bethlehem, PA. (Student Award: Honorable Mention) 
  25. T. Farinha, O. Ogidi-Ekoko,J. C. Goodrich, J. J. Wierer, Jr., N. Tansu, N. Strandwitz,   “Epitaxial MgO Films Grown on GaN by Atomic Layer Deposition: Growth Temperature Dependence and Thermal Stability”David and Lorraine Freed Undergraduate Research Symposium, Lehigh University (April 2018) Bethlehem, PA. (Student Award: Winner) 
  26. N. Tansu, J. J. Wierer, Jr., I. Fragkos, D. Borovac, A. M. Slosberg, and C. K. Tan, “Next Generation III-Nitride Materials and Devices – from Photonics to New Applications”, Proc. of the International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials (ISPlasma 2018), Nagoya, Japan, March 2018. (Invited)
  27. S. A. Al Muyeed, W. Sun, X. Wei, R. Song, N. Tansu, and J. J. Wierer, Jr., "Strain compensation in InGaN-based multiple quantum wells with AlGaN interlayers”, SPIE Photonics West (Feb. 2018) San Francisco, CA.
  28. N. Tansu, J. J. Wierer, Jr., C. K. Tan, and W. Sun "Next Generation III-Nitride Materials and Devices - from Photonics to New Applications", Proc. of the OSA Solid State Lighting (SSL) Topical Meeting 2017, Boulder, CO, USA, November 2017. (Invited)
  29. J. J. Wierer, Jr. Xiongliang Wei, and Syed Ahmed Al Muyeed, and Nelson Tansu, “Pathways to ultra-efficient solid-state lighting”, IEEE Photonics Conference (October 2017), Orlando FL (invited).
  30. J. J. Wierer, Jr., Xiongliang Wei, Syed Ahmed Al Muyeed, Wei Sun, and Nelson Tansu, “Routes to ultra-efficient III-nitride emitters for solid-state lighting” 11th International Symposium on Semiconductor Light Emitting Devices (October, 2017) Banff, Canada (invited).
  31. N. Tansu, J. J. Wierer, Jr., C. K. Tan, and W. Sun, “Next Generation III-Nitride Materials and Devices - From Photonics to New Applications”, SPIE Optics+Photonics, (Aug. 2017), San Diego, CA (invited).
  32. N. Tansu, J. J. Wierer, Jr., C. K. Tan, and W. Sun, “Next Generation III-Nitride Materials and Research-From Photonics to New Applications”, CLEO Pacific Rim, (Aug. 2017), Singapore (invited).
  33. W. Sun, R. Song, J. Wierer Jr., and N. Tansu, “Strain relaxation properties of OMVPE-grown AlInN semiconductors” AACGE (Aug 2017) Santa Fe, NM.
  34. I. Fragkos, W. Sun, D. Borvac, R. Song, J. Wierer Jr., and N. Tansu, “Pulsed OMVPE growth studies of InN integration of InGaN active regions” AACGE (Aug 2017) Santa Fe, NM.
  35. S. A. Al Muyeed, W. Sun, X. Wei, R. Song, N. Tansu, and J. J. Wierer, Jr., “Strain balancing in InGaN-based multiple quantum wells using AlGaN interlayers”, 59th Electronic Materials Conference (June 2017), South Bend, IN.
  36. J. J. Wierer, Jr., Xiongliang Wei, and Nelson Tansu, “III-nitride quantum dots for ultra-efficient LEDs” SPIE Photonics West (February, 2017) San Francisco, CA (invited)
  37. N. Tansu, and J. J. Wierer, Jr., “Next Generation III-Nitride Materials and Devices,” SPIE Photonics West, (Feb. 2017) San Francisco, CA. (invited)
  38. W. Sun, C.-K. Tan, J. J. Wierer Jr., and N. Tansu, "Ultra-broadband III-nitride digital alloys active region for optoelectronic applications”, SPIE Photonics West (Feb. 2017) San Francisco, CA.
  39. A. A. Allerman, M. H. Crawford, A. G. Baca, A. Armstrong, J.R. Dickerson, M. King, A. J. Fischer, and J. J. Wierer Jr., “Power electronic devices based on Al-rich AlGaN alloys”, SPIE Photonics West (Feb. 2017) San Francisco, CA.
  40. C.-K. Tan, W. Sun, J. J. Wierer Jr., and N. Tansu, “How the interface affects Auger process in quantum wells”, SPIE Photonics West (Feb. 2017) San Francisco, CA.
  41. C. K. Tan, W. Sun, D. Borovac, J. J. Wierer, Jr., and N. Tansu, “Dilute-Anion Nitride Semiconductors”, Proc. of the IEEE Photonics Conference 2016, Waikoloa, Hawaii, October 2016.
  42. J. J. Wierer, Jr., N. Tansu, and J. Y. Tsao, “Ultra-efficient solid-state lighting using III-nitride quantum dots” EEE International Photonic Conference (IWN), (October, 2016) Orlando, FL.
  43. Jonathan J. Wierer, and Nelson Tansu, “Research areas for ultra-efficient solid state-lighting”, EERE-SSL Roundtable, (September 2016), Washington D. C.
  44. W. Sun, C.-K. Tan, J. J. Wierer, Jr., and N. Tansu, “Miniband Engineering in III-Nitride Digital Alloy for Broadband Device Applications”, Lester Eastman Conference, (August 2016) Bethlehem, PA.
  45. C.-K. Tan, W. Sun, D. Borovac, J. J. Wierer, Jr., and N, Tansu, “Band Gap Engineering in GaN-Based Semiconductor with Dilute-Anion Incorporation for Visible Light Emitters”, Lester Eastman Conference, (August 2016) Bethlehem, PA.
  46. J. J. Wierer, Jr., N. Tansu, and J. Y. Tsao, “Achieving ultra-efficiency in III-nitride LEDs and laser diodes for solid-state lighting”, OSA’s Topical Meeting on Integrated Photonics Research, Silicon and Nano Photonics (IPR), (July 2016) Vancouver, B.C, Canada (invited).
  47. I. Montano, A. A. Alderman, J. J. Wierer, M. Moseley, E. J. Skogen. A. Tauke-Padretti, and G. A. Vawter, "Microscopic Modeling of Nitride Intersubband Absorbance," American Physical Society Meeting, (March 2016) Baltimore, MD.
  48. N. Tansu, and J. J. Wierer, “Next Generation III-Nitride Materials and Devices,” Proc. of the SPIE Photonics West 2016, Gallium Nitride Materials and Devices XI, (February 2016) San Francisco, CA. (invited)
  49. C.-K. Tan, W. Sun, D. Borovac, J. J. Wierer, Jr., and N. Tansu, “InGaN-GaNAs ‘Interface Quantum Well’ for Long Wavelength Emission”, DOE SSL Workshop, (Feb 2016) Raleigh, NC. (invited, student award winner)
  50. J. J. Wierer, Jr. “Edge termination in vertical GaN diodes/Opportunity for GaN substrates in SSL", (Jan. 2016) Davis, CA. (invited)
  51. N. Tansu, C. K. Tan, and J. J. Wierer, Jr., “Tutorial on III-nitride solid-state lighting and smart lighting”, IEEE Photonics Conference (IPC), (Oct 2015), Washington D. C.
  52. A. A. Allerman, M. W. Moseley, M. H. Crawford, J. J. Wierer, A. M. Armstrong, A. G. Baca, R. J. Kaplar, and B. G. Clark, “Low Dislocation Density AlGaN Epilayers for UV Laser Diodes and Devices for Power Electronics,” 228th ECS Meeting (Oct 2015), Phoenix, AZ.
  53. R.J. Kaplar, A. A. Allerman, A. M. Armstrong, A. G. Baca, A. J. Fischer, J. J. Wierer, and J. C. Neely, “Ultra-Wide-Bandgap Semiconductors for Power Electronics,” 228th ECS Meeting (Oct 2015), Phoenix, AZ.
  54. J. J. Wierer, Jr. and N. Tansu, “Breakthrough research leading to ultra-efficient solid-state lighting”, EERE-SSL Roundtable, (September 2015), Washington D. C.
  55. M. W. Moseley, A. A. Allerman, I. Montano, J. J. Wierer, A. Tauke-Pedretti, E. Skogen and G. A. Vawter, “Strain-Mediated Interfacial Diffusion and Shifts in Intersubband Transition Energies in AlN/AlGaN Superlattices”, ACCGE (Aug 2015), Big Sky, MT.
  56. M. H. Crawford, A. A. Allerman, A. M. Armstrong, J. J. Wierer, W. Chow, M. Moseley, M. W.  Smith, and K. C. Cross, “350-nm band edge-emitting laser diodes enabled by low-dislocation-density AlGaN templates”, IEEE Summer Topical Meeting (July 2015), Nassau, Bahamas.
  57. J. R. Dickerson, J. J. Wierer, M. P. King, B. Bryant, A. J. Fischer, A. A. Allerman and R. J. Kaplar, “A Numerical Analysis of Multiple Field Ring Designs for High Power GaN Diodes”,  57th Electronic Materials Conference (June 2015), Columbus, Ohio.
  58. M P. King, R. J. Kaplar, J. J. Wierer, M. W. Moseley, I. C. Kizilyalli, D. P. Bour, O. Aktas, H. Nie, D. Disney, A. A. Allerman, and A. M. Armstrong, “Investigation of Deep Levels in High-Breakdown-Voltage, Low-Threading-Dislocation-Density Vertical GaN P-i-N Diode”, 57th Electronic Materials Conference (June 2015), Columbus, Ohio.
  59. Montano, A. A. Allerman, J. J. Wierer, M. W. Moseley, E. J. Skogen, A. Tauke-Pedretti and G. A. Vawter, “Microscopic Modeling of Nitride Intersubband Absorbance”, 57th Electronic Materials Conference (June 2015), Columbus, Ohio.
  60. M. W. Moseley, A. A. Allerman, I. Montano, J. J. Wierer, A. Tauke-Pedretti, E. Skogen and G. A. Vawter, “Strain-Mediated Interfacial Diffusion and Shifts in Intersubband Transition Energies in AlN/AlGaN Superlattices”, 57th Electronic Materials Conference (June 2015), Columbus, Ohio.
  61. J. J. Wierer, Jr., and J. Y. Tsao “Prospects for laser diodes in solid-state lighting”, LEDIA (April 2015), Yokohama, Japan. (invited)
  62. J. J. Wierer, Jr., and J. Y. Tsao “Laser diodes in solid-state lighting”, CS International (March 2015), Germany. (Keynote)
  63. J. J. Wierer, Jr., I. Montano, M. H. Crawford, M. Moseley, and A. A. Allerman, “Effect of Thickness and Carrier Density on the Optical Polarization and Extraction Efficiency of 275nm Ultraviolet Light Emitting Diodes”, International Workshop on Nitride Semiconductors (Aug 2014), Wroclaw, Poland.
  64. A. A. Allerman, M. Moseley, J. J. Wierer, Jr., A. Armstrong, and, M. H. Crawford, “Impact of electrically-conducting defects on UVC-LED performance”, International Workshop on Nitride Semiconductors (Aug 2014), Wroclaw, Poland.
  65. J. J. Wierer, Jr., and J. Y. Tsao, “Solid-state lighting with III-nitride laser diodes”, International Workshop on Nitride Semiconductors (Aug 2014), Wroclaw, Poland.
  66. G. T. Wang, Q. Li, J. B. Wright, H. Xu, J. J. Wierer, Jr., D. D. Koleske, J. J. Figiel, A. Hurtado, L. F. Lester, C. Li, S. R. J. Brueck, T. S. Luk, and I. Brener, “Top-down III-nitride nanowires: from LEDs to lasers”, SPIE Optics and Photonics (Aug 2014), San Diego, CA.
  67. J. J. Wierer, Jr., and J. Y. Tsao “Laser diodes in solid-state lighting”, SPIE Optics and Photonics (Aug 2014), San Diego, CA. (invited)
  68. J. J. Wierer, Jr., “Research trends and future directions for solid-state lighting”, IES Regional Conference, (July 2014), Albuquerque NM. (invited)
  69. A. M. Armstrong, M. W. Moseley, A. A. Allerman, M. H. Crawford, J. J. Wierer, “Strong Sensitivity of Si Doping Efficiency and Deep Level Formation on Growth Temperature” for n-type Al0.7Ga0.3N, Electronic Materials Conference, (June 2014), Santa Barbara, CA.
  70. G. T. Wang, Q. Li, J. B. Wright, H. Xu, J. J. Wierer, D. D. Koleske, J. J. Figiel, A. Hurtado, L. F. Lester, G. Subramania, T. S. Luk, I. Brener, “Top-Down III-Nitride Nanowire LEDs and Lasers”, 56th Electronic Materials Conference, (June 2014), Santa Barbara, CA.
  71. J. J. Wierer, Jr., I. Montano, M. H. Crawford, and A. A. Allerman, “Anisotropic optical polarization of AlGaN based 275 nm light-emitting diodes due to quantum-size effects,” CLEO, (June 2014), San Jose, CA.
  72. A. A. Allerman, A. A., J. J. Wierer, I. Montano, M. W. Moseley, E. J. Skogen, A. Tauke-Pedretti, G. A. Vawter, “MOVPE Grown Electromodulators based on Intersubband Absorption Utilizing AlN-AlGaN Coupled Quantum Wells”, 5th International Symposium on Growth of III-Nitrides, (May 2014), Atlanta, GA.
  73. M. Moseley, A. A. Allerman, M. H. Crawford, J. J. Wierer, M. L. Smith, L. Biedermann, “Electrical Current Leakage and the Performance of UV-C LEDs”, 5th International Symposium on Growth of III-Nitrides, (May 14), Atlanta, GA.
  74. J. J. Wierer, A. J. Fischer, G. T. Wang, J. Y. Tsao, and B. Biefeld, “Laser Diodes for Solid-State Lighting”, EERE SSL Workshop PI Meeting, (Jan 2014), Tampa, FL (invited).
  75. J. Riley, S. Padalkar, Q. Li, P. Lu, D. Koleske, J. J. Wierer, G. Wang, L. Lauhon, “Revealing the 3-D Structure of Nanowire LEDs”, 2014 DOE Solid-State Lighting R&D Workshop, (Jan 2014), Tampa, FL.
  76. S. Howell, S. Padalkar, K. Yoon, Q. Li, D. D. Koleske, J. J. Wierer, G. T. Wang, L. J. Lauhon, “Spatial Mapping of Efficiency of GaN/InGaN Nanowire Array Solar Cells by using Scanning Photocurrent Microscopy”, 2013 Fall MRS Meeting, (Dec 13), Boston, MA.
  77. J. J. Wierer, Jr., D. S. Sizov, A. Neumann, S. R. J. Brueck, and J.Y. Tsao,” The potential III-nitride laser diodes as a future solid-state lighting source”, IEEE Photonics Society IPC 2013, (Sept 2013), Washington, D. C. (invited)
  78. J. J. Wierer, Jr., D. S. Sizov, A. Neumann, S. R. J. Brueck, and J.Y. Tsao,” The potential III-nitride laser diodes for solid-state lighting”, ICNS10, (Aug 2013), Washington, D. C.
  79. J. J. Wierer, Jr., D. S. Sizov, and J.Y. Tsao,” III-nitride laser diodes for solid-state lighting”, Energy Frontier Research Centers Principal Investigators, (July 2013), Washington DC.
  80. J. J. Wierer, Jr., D. S. Sizov, A. Neumann, S. R. J. Brueck, and J.Y. Tsao,” Study of III-nitride laser diodes for solid-state lighting”, CLEO, (June 2013), San Jose, CA.
  81. J. J. Wierer, Jr., D. Koleske, G. Wang, Q. Li, S. Lee, and A. Fischer, “III-nitride solar cells”, Asia Photonics Conference, (Nov 2012), Guangzhou, China. (invited)
  82. A. A. Allerman, J. J. Wierer, Q. Li, M. H. Crawford, and S. R. Lee, “ Impurity-Induced Disordering in Si- and Mg-Doped AlGaN-AlN Superlattices” Meeting of the Electrochemical Society (Oct 2012) Honolulu HI.
  83. G. T. Wang, Q. Li, J. J. Wierer, D. D. Koleske, J. J. Figiel, J. B. Wright, T. S. Luk, and I. Brener, “III-nitride nanowires: From the Bottom-Up to the Top-Down” SPIE Optics and Photonics Conference (Aug 2012), San Diego, CA.
  84. G. T. Wang, Q. Li, J. J. Wierer, D. D. Koleske, J. J. Figiel, J. B. Wright, T. S. Luk, and I. Brener, “III-nitride nanowires: Novel Materials for Lighting and Photovoltaics” Photonics North (June 2012), Montreal, Canada.
  85. A. A. Allerman, J. J. Wierer, Q. Li, S. R. Lee, and M. H. Crawford, “MOVPE Growth of Intersubband Absorption in AlN-AlGaN Superlattices, “16th MOVPE Conference, (May 2012), Korea.
  86. Q. Li, G. T. Wang, J. B. Wright, I. Brener, T. S. Luk, M. H. Crawford, G. S. Subramania, D. D. Koleske, J. J. Wierer, S. R. Lee, “ Top-Down III-nitride nanowires” Electronic Materials Conference (June 2012), Santa Barbara, CA.
  87. J. J. Wierer, Jr., G. T. Wang, Q. Li, D. D. Koleske, and S. R. Lee, “III-nitride nanowire array solar cells” CLEO, (May 2012), San Jose, CA.  (postdeadline talk)
  88. G. T. Wang, Q. Li, J. J. Wierer, D. D. Koleske, J. J. Figiel, “Fabrication and characterization of vertically-integrated, III-nitride nanowire based LEDs and solar cells”, Spring MRS (March 2012), San Francisco, CA.
  89. G. T. Wang, Q. Li., J. J. Wierer, J. J. Figel, J. B. Wright, T. S. Luk, and I. Brener, “Top-Down Fabrication of GaN-based nanorod LEDs and lasers” SPIE Photonics West, (Jan 2012), San Francisco, CA.
  90. J. J. Wierer, Jr. “Lasers and Nanowire Architectures for SSL” EERE-NETL-SSL Roundtable, (Nov. 2011), Washington D. C.
  91. A. A. Allerman, M. H. Crawford, S. R. Lee, K. C. Cross, M. A. Miller, J. J. Wierer, and B. Clark, “Low Dislocation Density AlxGa1-xN Alloys x<0.3) on Overgrowth of Patterned Templates” 9th Int. Conf. of Nitride Semiconductors” (July 2011), Glasgow, U. K.
  92. Q. Li, G. T. Wang, J. B. Wright, I. Brener, T. S. Luk, M. H. Crawford, G. S. Subramania, D. D. Koleske, J. J. Wierer, S. R. Lee, “ Internal Quantum Efficiency in Nanorod LED Arrays Created by Top-Down Techniques” 53rd Electronic Materials Conference (June 2011), Santa Barbara, CA.
  93. A. A. Allerman, M. H. Crawford, S. R. Lee, K. C. Cross, M. A. Miller, J. J. Wierer, and B. Clark, “Low Dislocation Density Al0.32Ga0.68N by Overgrowth of Patterned Templates” 53rd Electronic Materials Conference (June 2011), Santa Barbara, CA.
  94. J. J. Wierer, Jr., “Light Extraction Methods in Light-Emitting Diodes”, CLEO, (May, 2011), Baltimore, MD (invited tutorial).
  95. J. Y. Tsao, Jeffrey Y., M. E. Coltrin, M. H. Crawford, J. Wierer, and J. A. Simmons, “Four Challenges for Solid-State Lighting”, DOE EERE SSL Workshop, (Feb 2011) San Diego, CA
  96. J. J. Wierer, Jr., D. D. Koleske, A. J. Fischer, S. R. Lee, G. N. Nielson, M. Okandan, InGaN-based Photovoltaic Devices for High Efficiency Mechanically Stacked Multijunction Cell Structures, International Workshop on Nitride Semiconductors (Sept 2010), Tampa, FL (invited).
  97. A. A. Allerman, J. J. Wierer, M. H. Crawford, Q. Li, S. R. Lee, Impurity-Induced Disordering in Mg- and Si-doped AlGaN-AlN Superlattices, International Workshop on Nitride Semiconductors, (Sept 2010), Tampa, FL.
  98. A. A. Allerman, J. J. Wierer, Jr., M. Crawford, Q. Li, “Influence of MOVPE Growth Conditions on Intersubband Absorption in AlN –AlGaN Superlattices”, Electronic Materials Conference, (June 2010).
  99. J. Y. Tsao, M. Crawford, Y. Ohno, J. Simmons, P. Waide,  J. J. Wierer, Jr., “Solid-State Lighting: Science, Technology, Economic Perspective”, SPIE Photonics West, (26 Jan 2010), San Jose, CA.
  100. J. J. Wierer, “Light Extraction in III-Nitride Light-Emitting Diodes”, Lehigh University COT Open House, (Oct 2009) Bethlehem, PA (invited).
  101. M. Crawford, et al., “Roadblocks to High Efficiency Solid-State Lighting: Bridging the ‘Green-Tellow Gap’” Photonic Applications Systems Technologies, Baltimore, MD (June 2009).
  102. J. J. Wierer, “Light Generation and Extraction in III-Nitride Light-Emitting Diodes”, Spring Meeting of the Materials Research Society , (April 2009) San Francisco, CA (Invited).
  103. J. J. Wierer and A. David, “Directional Emission III-Nitride Photonic Crystal LEDs” ICNS7, (Sept 2007) Las Vegas, NV.
  104. N. Gardner, J. J. Wierer, J. Kim, M. R. Krames, “Linearly polarized spontaneous electroluminescence from m-plane InGaN/GaN multiple-quantum-well light-emitting diodes”, International Conference on Nitride Semiconductors (Aug 2005), Bremen, Germany. 
  105. N. Gardner, J. Kim, J. J. Wierer, Y. C. Shen, M. R. Krames “Linearly polarized spontaneous emission from m-plane InGaN/GaN multiple-quantum-well LEDs”,  SPIE Photonics West (Jan. 2005), San Jose, CA.
  106. J. J. Wierer, “High-power III-Nitride LEDs and Photonic Crystal LEDs,” Light–Matter Coupling Conference-PLMCN5 (June 2005), Edinburgh, UK., (invited).
  107. J. J. Wierer, “High-power III-Nitride LEDs and Photonic Crystal LEDs,” Univ. of IL, MNTL/CNST Nanotechnology workshop (May 2005), Champaign, IL (invited).
  108. J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, J. R. Wendt, and, M. M. Sigalas, “III-Nitride LEDs with Photonic Crystal Structures,” SPIE Photonics West, (Jan. 2005), San Jose, CA.
  109. Y.C. Shen, J. J. Wierer, M. R. Krames, M. J. Ludowise, M. S. Misra, F. Ahmed, A. Y. Kim, G. O. Mueller, J. C. Bhat, S. A. Stockman, and P. S. Martin, “Optical Cavity Effects in InGaN/GaN Quantum-Well-Heterostructure Flip-Chip Light-Emitting Diodes”, SPIE Photonics West, (Jan. 2004) San Jose, CA.
  110. N. F. Gardner, J. Bhat, D. Collins, L. Cook, M. G. Craford, R M. Fletcher, P. Grillot, W. K. Gotz, M. Kueper, R. Khare, A. Kim, M. R. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. A. Stockman, S. Subramanya, T. Trottier, J. J. Wierer, “High-flux and high-efficiency nitride-based light emitting devices”, IEEE Lasers and Electro Optics Society Conference (Nov 2002) Glasgow Scotland (invited)
  111. F. M. Steranka, J. Bhat, D. Collins, L. Cook, M. G. Craford, R. Fletcher, N. Gardner, P. Grillot, R. Fletcher, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Keuper, R. Khare, A. Kim,, M. Ludowise, P.S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y. -C. Shen, D. Steigerwald, S. Stockman, D. Steigerwald, S. Subramanya, T. Trottier, and J. J. Wierer  “High High-Power Power LEDs LEDs - Technology Status and Market Applications” International Workshop on Nitride Semiconductors (July 2002) Aachen, Germany.
  112. S.A. Stockman, W. Götz, L. Cook, M. Misra, A.Y. Kim, N.F. Gardner, J.J. Wierer, D.A. Steigerwald,D. Collins, P.S. Martin, M.R. Krames, D. Sun, E. Johnson, and R.S. Kern, “High-Power GaN-based LEDs for Solid Solid-State Lighting”,  SPIE Photonics West (Jan. 2002), San Jose, CA.
  113. D. A. Steigerwald,J. J. Bhat, C.-H. Chen, W. Goetz, R. , C.-H. Chen, W. Goetz, R. Khare, A. Kim, M. R. Krames, M. Ludowise. P. S. Martin, S. Rudaz, S. Stockman,S. Subramanya S-C Tan, J. Thompson, and J. J. Wierer  “High Power, High Efficiency InGaN Light Emitting Diodes”, SPIE Photonics West (2001), San Jose CA.
  114. W. Goetz, F. Ahmed, J. Bhat, L. Cook, N.F. Gardner, E. Johnson, M. Misra, R.S. Kern, A.Y. Kim, J. Kim, J. Kobayashi, M.R. Krames, M. Ludowise, P.S. Martin, T. Mihopoulos, A. Munkholm, S. Rudaz, S. Salim, Y-C. Chen, D.A. Steigerwald, S.A. Stockman, J. Sun, J.J. Wierer, D. Vanderwater, F.M. Steranka, and M.G. Craford “Power III-Nitride LEDs”, International Conference on Nitride Semiconductors-ICNS-4,  (July 2001) Denver, CO.
  115. P. S. Martin, J. C. Bhat, C.-H. Chen, L. W. Cook, M. G. Craford, N. F. Gardner, W. Götz, R. S. Kern, R. Khare, A. Kim, M. R. Krames, M. J. Ludowise, R. Mann, M. Misra, J. O'Shea, Y.-C. Shen, F. M. Steranka, S. A. Stockman, S. Subramanya, S. L. Rudaz, D. A. Steigerwald, and J. J. Wierer, “High-Power Red, Green, Blue and White LEDs” SPIE  Photonics West (Jan. 2001) San Jose CA.
  116. J. J. Wierer, J. C. Bhat, C.-H. Chen, G. Christenson, L.W. Cook, M. G. Craford, N. F. Gardner, W. K. Goetz, R. S. Kern, R. Khare, A. Kim, M. R. Krames, M. J. Ludowise, R. Mann, P. S. Martin, M. Misra, J. O'Shea, Y.-C. Shen, F. M. Steranka, S. A. Stockman, S. G. Subramanya, S. L. Rudaz, D. A. Steigerwald, J. Yu “High-Power AlGaInN Light-Emitting Diodes,” SPIE Photonics West, (Jan. 2001) San Jose, CA.
  117. M. R. Krames, G. Christenson, D. Collins, L. W. Cook, M. G. Craford, A. Edwards, R. M. Fletcher, N.F. Gardner, W. K. Goetz, W. R. Imler, E. Johnson, R. S. Kern, R. Khare, F.A. Kish, C. Lowery, M. J. Ludowise, R. Mann, M. Maranowski, S. A. Maranowski, P. S. Martin, J. O'Shea, S. L. Rudaz, D. A. Steigerwald, J. Thompson, J. J. Wierer, J. Yu, D. Basile, Y.-L. Chang, G. Hasnain, M. Heuschen, K. P. Killeen, C. P. Kocot, S. Lester, J. N. Miller, G. O. Mueller, R. Mueller-Mach, S. J. Rosner, R. P. Schneider, T. Takeuchi, and T. S. Tan “High Brightness AlGaInN Light-Emitting Diodes,” SPIE Photonics West (Jan. 2000) San Jose, CA.

Patents (US only)


  1. J. J. Wierer, Jr. and J. E. Epler,” LIGHT EMITTING DEVICE INCLUDING POROUS SEMICONDUCTOR LAYER”, US Patent 10,672,949 (June 2, 2020)
  2. F. Danesh, N. Gardner, and J. J. Wierer, Jr. “LIGHT EMITTING DIODES WITH INTEGRATED REFLECTOR FOR A DIRECT VIEW DISPLAY AND METHOD OF MAKING THEREOF”, US Patent 10,553,767 (February 4, 2020)
  3. J. J. Wierer, Jr., A. David, and H. Choy” SEMICONDUCTOR LIGHT EMITTING DEVICE WITH LIGHT EXTRACTION STRUCTURES”, US Patent 10,164,155(December 25, 2018)
  4. J. J. Wierer, Jr. and J. E. Epler,” III-NITRIDE LIGHT EMITTING DEVICE INCLUDING POROUS SEMICONDUCTOR LAYER”, US Patent 10,090,435 (October 2, 2018)
  5. J. J. Wierer, Jr., A. David, and H. Choy,” SEMICONDUCTOR LIGHT EMITTING DEVICE WITH LIGHT EXTRACTION STRUCTURES”, US Patent 9,935,242 (April 3, 2018)
  6. J. R, Dickerson, J. J. Wierer, Jr., R. Kaplar, and A. A. Allerman, DIODE AND METHOD OF MAKING THE SAME, US Patent 9917149 (March, 2018)
  7. J. J. Wierer, Jr., A. J. Fischer, and A. A. Allerman, VERTICAL III-NITRIDE THIN-FILM POWER DIODE, US Patent 9595616 (March 2017).
  8. J. J. Wierer, Jr. and J. E. Epler, III-NITRIDE LIGHT EMITTING DEVICE INCLUDING A POROUS SEMICONDUCTOR, US Patent 9385265 (July 2016).
  9. J. J. Wierer, Jr., and A. A. Allerman, Selective Layer Disordering in III-Nitrides with a Capping Layer, US Patent 9368677 (June 14, 2016)
  10. A. J. Fischer, J. Y. Tsao, J. J. Wierer, Jr., X. Xiaoyin, and G. T. Wang “QUANTUM-SIZE- CONTROLLED PHOTOELECTROCHEMICAL ETCHING OF SEMICONDUCTOR NANOSTRUCTURES”, US Patent 9276382 (March 1, 2016) 
  11. J. J, Wierer, Jr., I. Montano, A. A. Allerman, “HIGH EXTRACTION EFFICIENCY ULTRAVIOLET LIGHT-EMITTING DIODE,” US Patent 9196788 (Nov. 24, 2015)
  12. A. David, H. Choy, and J. J. Wierer, Jr.,” SEMICONDUCTOR LIGHT EMITTING DEVICE WITH LIGHT EXTRACTION STRUCTURES”, US Patent 9,142,726 (Sept. 22, 2015)
  13. J. J. Wierer Jr., M. R. Krames, and N. Gardner “GROWN PHOTONIC CRYSTALS IN SEMICONDUCTOR LIGHT EMITTING DEVICES”, US Patent 9000450 (April 7, 2015)
  14. J. J. Wierer, Jr., and A. A. Allerman, "IMPURITY INDUCED DISORDER IN III-NITRIDE MATERIALS AND DEVICES", US Patent 8895335 (Nov 25, 2014)
  15. G. T. Wang, Q. Li, J. J. Wierer, Jr., and D. Koleske ” AMBER LIGHT-EMITTING DIODE COMPRISING A GROUP III-NITRIDE NANOWIRE ACTIVE REGION”, US Patent 8785905 (July 22, 2014)
  16. A. David, H. Choy, and  J. J. Wierer, Jr., ” SEMICONDUCTOR LIGHT EMITTING DEVICE WITH LIGHT EXTRACTION STRUCTURES”, US Patent 8242521 (Aug 14, 2012)
  17. J. J. Wierer Jr. and N. Gardner “GROWN PHOTONIC CRYSTALS IN SEMICONDUCTOR LIGHT EMITTING DEVICES”, US Patent 8163575 (April 24, 2012)
  18. A. David, H. Choy, and J. J. Wierer, Jr., ” SEMICONDUCTOR LIGHT EMITTING DEVICE WITH LIGHT EXTRACTION STRUCTURES”, US Patent 7985979 (July 26, 2011)
  19. J. J. Wierer Jr. and J. E. Epler,” III-NITRIDE LIGHT EMITTING DEVICE INCLUDING POROUS SEMICONDUCTOR LAYER”, US Patent 7928448 (April 19, 2011)
  20. J. J. Kim, J. Epler, N. Gardner, M. R. Krames, and J. J. Wierer Jr., “SEMICONDUCTOR LIGHT EMITTING DEVICES INCLUDING IN-PLANE LIGHT EMITTING LAYERS”, US Patent 7808011 (Oct 5, 2010)
  21. J. J. Wierer Jr., J. Epler, M. R. Krames, and M. G. Craford, “POLARIZATION-REVERSED LIGHT EMITTING DEVICE”, US Patent 7804100 (Sept 28, 2010)
  22. J. Epler, O. Shchekin, F. J. Wall, Jr., J. J. Wierer Jr., and L. Zhou, ” METHOD OF REMOVING THE GROWTH SUBSTRATE OF A SEMICONDUCTOR LIGHT EMITTING DEVICE”, US Patent 7754507 (July 13, 2010)
  23. J. J. Wierer Jr. and M. Sigalas, “LIGHT EMITTING DEVICE INCLUDING ARRAYED EMITTERS DEFINED BY A PHOTONIC CRYSTAL”, US Patent 7697584 (April 13, 2010)
  24. J. J. Wierer Jr., M. R. Krames, and J. E. Epler.,” PHOTONIC CRYSTAL LIGHT EMITTING DEVICE”, US Patent 7675084 (March 9, 2010)
  25. M. R. Krames, J. J. Wierer Jr., and M. M. Sigalas, “LED INCLUDING PHOTONIC CRYSTAL STRUCTURE”, US Patent 7642108 (Jan 5, 2010)
  26. J. J. Wierer Jr., M. R. Krames, and  J. E. Epler, “PHOTONIC CRYSTAL LIGHT EMITTING DEVICE”, US Patent 7442965 (March 9, 2006)
  27. J. J. Wierer Jr. and M. M. Sigalas, “PHOTONIC CRYSTAL LIGHT EMITTING DEVICE WITH MULTIPLE LATTICES”, US Patent 7442964 (Oct 28, 2008)
  28. J. J. Wierer Jr. , M. R. Krames, and M. M. Sigalas, “PHOTONIC CRYSTAL LIGHT EMITTING DEVICE”, US Patent 7294862 (Nov 13, 2007)
  29. M. R. Krames, M. M. Sigalas, and J. J. Wierer Jr., “LED INCLUDING PHOTONIC CRYSTAL STRUCTURE”, US Patent 7279718 (Oct 9, 2007)
  30. J. J. Wierer Jr., M. R. Krames, M. M. Sigalas “PHOTONIC CRYSTAL LIGHT EMITTING DEVICE”, US Patent 7012279 (March 14, 2006)
  31. J. C. Kim, N. F. Gardner, M. R. Krames, Y-C. Shen, T. A. Trottier, J. J. Wierer Jr., “HETEROSTRUCTURES FOR III-NITRIDE LIGHT EMITTING DEVICES”, US Patent 6995389 (Feb 7, 2006)
  32. J. J. Wierer Jr., M. R. Krames, “MULTI-LAYER HIGHLY REFLECTIVE OHMIC CONTACTS FOR SEMICONDUCTOR DEVICES”, US Patent 6992334 (Jan 31, 2006)
  33. J. E. Epler, M. R. Krames, and J. J. Wierer Jr.,  “RESONANT CAVITY III-NITRIDE LIGHT EMITTING DEVICES FABRICATED BY GROWTH SUBSTRATE REMOVAL” US Patent 6956246 (Oct 18, 2005)
  34. N. F. Gardner, J. J. Wierer Jr., G. O. Mueller, and M. K. Krames, “SEMICONDUCTOR LIGHT EMITTING DEVICES”, US Patent 6847057 (Jan 25, 2005)
  35. M. R. Krames, D. A. Steigerwald, F. A. Kish, P. Rajkomar, J. J. Wierer Jr., and T. S. Tan, “III-NITRIDE LIGHT EMITTING DEVICE WITH INCREASED LIGHT GENERATING CAPABILITY” US Patent 6844571 (Jan 18, 2005)
  36. D. A. Steigerwald, S. D. Lester, and J. J. Wierer Jr., “HIGHLY REFLECTIVE CONTACTS TO III-NITRIDE FLIP-CHIP LEDS,” US Patent 6573537 (June 3, 2003)
  37. M. R. Krames, D. A. Steigerwald, F. A. Kish, P. Rajkomar, J. J. Wierer Jr., and T. S. Tan, “III-NITRIDE LIGHT EMITTING DEVICE WITH INCREASED LIGHT GENERATING CAPABILITY” US Patent 6521914 (Feb 18, 2003)
  38. J. J. Wierer Jr., M. R. Krames, D. A. Steigerwald, F. A. Kish, P. Rajkomar, and T. S. Tan, “METHOD OF MAKING III-NITRIDE LIGHT EMITTING DEVICE WITH INCREASED LIGHT GENERATING CAPABILITY,” US Patent 6514782 (Feb 4, 2003)
  39. M. R. Krames, D. A. Steigerwald, F. A. Kish, P. Rajkomar, J. J. Wierer Jr., and T. S. Tan, “III-NITRIDE LIGHT EMITTING DEVICE WITH INCREASED LIGHT GENERATING CAPABILITY” US Patent 6486499 (Nov 26, 2002)
  40. M. J. Ludowise, S. A. Maranowski, D. A. Steigerwald, J. J. Wierer, Jr., “METHOD OF FORMING CONTACTS TO A P-GAN LAYER,” US Patent 6287947 (Sept 11, 2001)
  41. N. Holonyak, Jr., J. J. Wierer, and P. W. Evans, “SEMICONDUCTOR DEVICES AND METHODS WITH TUNNEL CONTACT HOLE SOURCES” US Patent 5936266 (Aug 10, 1999)

Book Chapters

  1. Jeff Y. Tsao, J. J. Wierer Jr., Lauren E.S. Rohwer, Michael E. Coltrin, Mary H. Crawford, Jerry A. Simmons, Po-Chieh Hung, Harry Saunders, Dmitry S. Sizov, Raj Bhat, and Chung-En Zah, “Ultra-efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches”, III-Nitride Based Light Emitting Diodes and Applications, (Springer, 2017).
  2. Jeff Y. Tsao, J. J. Wierer Jr., Lauren E.S. Rohwer, Michael E. Coltrin, Mary H. Crawford, Jerry A. Simmons, Po-Chieh Hung, Harry Saunders, Dmitry S. Sizov, Raj Bhat, and Chung-En Zah, “Ultra-efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches”, III-Nitride Based Light Emitting Diodes and Applications, (Springer, 2013).
  3. M.H. Crawford, J.Y. Tsao, J. J. Wierer, Jr., M.E. Coltrin, and R.F. Karlicek, “Solid-State Lighting: Towards Smart and Ultra-Efficient Materials, Devices, Lamps and Systems”, D.L. Andrews, Ed., Photonics Volume 3: Photonics Technology and Instrumentation (Wiley, 2013).

Conference Proceedings

  1. G. T. Wang, Q. Li, J. Wierer, J. Figiel, J. B. Wright, T. S. Luk, and I. Brener, “Top-down fabrication of GaN-based nanorod LEDs and lasers” Proceedings of SPIE Vol. 5941, 59410J (2011). DOI: 10.1117/12.909377
  2. G. T. Wang, Q. Li, J. Huang, J. Wierer, A. Armstrong, Y. Lin, P. Upadhya, R. Prasankumar, “III-Nitride nanowires: Emerging Materials for Lighting and Energy Applications” ECS Transactions, 35, 3 (2011).  DOI: 10.1149/1.3570840
  3. N. F. Gardner, J. C. Kim, J. J. Wierer, Y.-C. Shen, M. R. Krames, "Linearly polarized spontaneous emission from m-plane InGaN/GaN multiple-quantum-well LEDs", Proceedings of SPIE Vol. 5941, 59410J (2005)
  4. J. J. Wierer, M. R. Krames, J. Epler, N. F. Gardner, J. R. Wendt, M. M. Sigalas, S. R. J. Brueck, D. Li, M. Y. Shagam, "III-nitride LEDs with photonic crystal structures", Proceedings of SPIE Vol. 5739, (2005)
  5. Y.-C. Shen, J. J. Wierer, M. R. Krames, M. J. Ludowise, M. Misra, F. Ahmed, A. Y. Kim, G. O. Mueller, J. C Bhat, S. A. Stockman, P. S. Martin, "Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes", Proceedings of SPIE Vol. 5366, (2004)
  6. J. J. Wierer, J.C Bhat, C.-Hua Chen, G. Christenson, L. W. Cook, M. G.Craford, N. F. Gardner, W. K. Goetz, R. S. Kern, R. Khare, A. Y. Kim, M. R. Krames, M. J. Ludowise, R. Mann, P. S. Martin, M. Misra, J. J. O'Shea, Y.-C. Shen, F. M. Steranka, S. A. Stockman, S. G. Subramanya, S. L. Rudaz, D. A. Steigerwald, J. Yu, "High-power AlInGaN light-emitting diodes", Proceedings of SPIE Vol. 4278, (2001)
  7. M.R. Krames, G. Christenson, D. Collins, L.W. Cook, M. George Craford, A. D. Edwards, R. M. Fletcher, N. F. Gardner, W. K. Goetz, W. R. Imler, E. Johnson, R. Scott Kern, R. Khare, F. Kish, C. Lowery, M. J. Ludowise, R. Mann, M. Maranowski, S. A. Maranowski, P. S. Martin, J. J. O'Shea, S. L. Rudaz, D. A. Steigerwald, J. Thompson, J. J. Wierer, J. Yu, D. Basile, Y.-L. Chang, G. Hasnain, M. Heuschen, K. P. Killeen, Chris P. Kocot, Steven D. Lester, Jeffrey N. Miller, Gerd O. Mueller, Regina Müller-Mach, S. J. Rosner, R. P. Schneider, T. Takeuchi, T. S. Tan, "High-brightness AlGaInN light-emitting diodes", Proceedings of SPIE Vol. 3938, (2000)