Solid-State Devices Group
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Photonic devicesLED-based lighting is the most efficient source of white light ever created. Despite this success there are many challenges that remain to advance solid-state lighting to ultra-efficiency. While at Sandia, Prof. Wierer and J. Tsao pioneered the idea of using lasers for SSL. At Lehigh, our group is researching other advances, including efficiency droop mitigation, quantum dots, nano-scale and photonic crystal emitters, and higher efficiency designs at green-red wavelengths. These emitters have applications in lighting, displays, and quantum computing.
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Power electronic devicesIII- nitride semiconductors are an interesting candidate for next generation of power electronics because of their large bandgap and high figure of merit. Here we are exploring novel power device designs to increase performance, investigating ultra-wide bandgap semiconductors, oxidation of III-nitrides, and discovering the physics of III-nitride power devices.
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III-nitride materials and physicsMore broadly our group is interested in III-nitride materials, devices, and physics. III-nitride semiconductors are versatile and possess attractive properties such as —interband and intersubband transitions from the ultra-violet to infrared, tunable spontaneous and piezoelectric polarization, a facile ability to form nanostructures, high critical electric fields, low wear rate, and stabilities to extremely high temperatures. Because of these properties, III-nitrides are an almost ideal platform for novel semiconductor device research. Other device interests of our group include photovoltaics, AlGaN ultraviolet emitters, and layer disordering and devices using AlGaN intersubband structures.
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